FET type N channel technology MOSFET (Metal Oxide) Drain-Source Voltage (Vdss) 40V Current at 25°C - Continuous Drain (Id) 375A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V On-resistance (max) at different Id, Vgs 0.59 milliohms @ 195A, 10V Vgs(th) (max) at different Ids 2.5V @ 250μA Gate charge (Qg) at different Vgs (max) 330nC @ 4.5V Vgs (max) ±20V Input capacitance (Ciss) at different Vds (max) 20082 pF @ 25V FET function - Power dissipation (max) 3.8W(Ta), 341W(Tc) Operating temperature -55°C ~ 175°C (TJ) installation type Surface Mount Type Supplier Device Packaging DirectFET™ Isometric L8 Package/Enclosure DirectFET™ Isometric L8 Basic product number IRL7472