FET type N channel technology MOSFET (Metal Oxide) Drain-source voltage (Vdss) 25V Current at 25°C - Continuous Drain (Id) 220mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V On-resistance (max) at different Id, Vgs 4 ohms @ 400mA, 4.5V Vgs(th) (maximum) at different Ids 1.06V @ 250μA Gate charge (Qg) at different Vgs (max) 0.7nC @ 4.5V Vgs (max) ±8V Input capacitance (Ciss) at different Vds (max) 9.5 pF @ 10V FET function - Power dissipation (max) 350mW (Ta) Operating temperature -55°C ~ 150°C (TJ) installation type Surface Mount Type Supplier Device Packaging SOT-23-3 Package/Enclosure TO-236-3, SC-59, SOT-23-3 Basic product number FDV301