FET type N channel technology MOSFET (Metal Oxide) Drain-source voltage (Vdss) 60V Current at 25°C - Continuous Drain (Id) 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V On-resistance (max) at different Id, Vgs 7.5 ohms @ 500mA, 10V Vgs(th) (maximum) at different Ids 2.5V @ 250μA Vgs (max) ±20V Input capacitance (Ciss) at different Vds (max) 50pF @ 25V FET function - Power dissipation (max) 225mW (Ta) Operating temperature -55°C ~ 150°C (TJ) installation type Surface Mount Type Supplier Device Packaging SOT-23-3 (TO-236) Package/Enclosure TO-236-3, SC-59, SOT-23-3 Basic product number 2N7002