FET type P channel technology MOSFET (Metal Oxide) Drain-Source Voltage (Vdss) 60V Current at 25°C - Continuous Drain (Id) 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V On-resistance (max) at different Id, Vgs 111 milliohms @ 2.9A, 10V Vgs(th) (max) at different Ids 3V @ 250μA Gate charge (Qg) at different Vgs (max) 18.1nC @ 10V Vgs (max) ±20V Input capacitance (Ciss) at different Vds (max) 942 pF @ 30V FET function - Power dissipation (max) 600mW (Ta) Operating temperature -55°C ~ 150°C (TJ) installation type Surface Mount Type Supplier Device Packaging 6-TSOP Package/Enclosure SOT-23-6 Slim, TSOT-23-6 Basic product number NVGS512