FET type N channel technology MOSFET (Metal Oxide) Drain-Source Voltage (Vdss) 30V Current at 25°C - Continuous Drain (Id) 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V On-resistance (max) at different Id, Vgs 5 milliohms @ 40A, 10V Vgs(th) (max) at different Ids 2.5V @ 250μA Gate charge (Qg) at different Vgs (max) 14nC @ 5V Vgs (max) ±20V Input capacitance (Ciss) at different Vds (max) 1850 pF @ 25V FET function - Power dissipation (max) 70W (Tc) Operating temperature 175°C (TJ) installation type Surface Mount Type Supplier Device Packaging DPAK Package/Enclosure TO-252-3, DPak (2 leads + tab), SC-63 Basic product number STD86