ET type N channel technology MOSFET (Metal Oxide) Drain-Source Voltage (Vdss) 40V Current at 25°C - Continuous Drain (Id) 195A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V On-resistance (max) at different Id, Vgs 1.6 milliohms @ 100A, 10V Vgs(th) (max) at different Ids 3.9V @ 250μA Gate charge (Qg) at different Vgs (max) 324nC @ 10V Vgs (max) ±20V Input capacitance (Ciss) at different Vds (max) 10820 pF @ 25V FET function - Power dissipation (max) 294W (Tc) Operating temperature -55°C ~ 175°C (TJ) installation type through hole Supplier Device Packaging TO-220AB Package/Enclosure TO-220-3 Basic product number IRFB7434